请帮忙翻译下关于SiC反面的一个段落 谢谢了!

题目

请帮忙翻译下关于SiC反面的一个段落 谢谢了!
Intrinsic defects generated by ion implantation
strongly affect the annealing process in SiC. The
conducted coimplantation experiments reveal that
the electrical activation of implanted P donors is
predominantly governed by the site-competition
effect, while in case of implanted N donors the
formation of electrically neutral complexes
strongly reduces the donor activity. Negative-Ucenters
E1/E2
1/+ and Z1/Z2
1/+ are observed in
6H– and 4H–SiC under illumination with photons
of different energy. No negative-U-behavior is
detected for the corresponding defect center
Z1/Z2(3C) in 3C–SiC.
不是SiC反面是SiC方面的~!!着急打错了~!!

答案

固有缺陷产生的离子注入强烈影响热处理碳化硅.该coimplantation进行的实验表明,电激活植入p捐助为主均受网站市场竞争的效果,而一旦注入n捐助形成electricallyneutral物大大减少了捐助活动.负ucenterse1/e2/+和z1/z2/+中观察6h-和4H-SiC光照下,与光子不同的能源.无负U型行为,发现了相应的缺陷中心z1/z2(116)3C-SiC的.